Items where Author is "Stocchi, M."

Article

Stocchi, M. and Mencarelli, D. and Pierantoni, L. and Kot, D. and Lisker, M. and Göritz, A. and Kaynak, C. Baristiran and Wietstruck, M. and Kaynak, Mehmet (2019) Mid-infrared optical characterization of thin SiNx membranes. Applied Optics, 58 (19). pp. 5233-5239. ISSN 1559-128X (Print) 2155-3165 (Online)

Papers in Conference Proceedings

Stocchi, M. and Wietstruck, M. and Schulze, S. and Zhibo, C. and Tolunay, S. and Kaynak, Mehmet (2020) Full-wave RF modeling of a fan-out wafer-level packaging technology based on Al-Al wafer bonding. In: IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), San Antonio, TX, USA

Kaynak, C. B. and Goritz, A. and Yamamoto, Y. and Wietstruck, M. and Stocchi, M. and Ünal, Kadir Eren and Özdemir, Mehmet Bora and Özsoy, Yusuf and Gürbüz, Yaşar and Kaynak, Mehmet (2019) Mechanical and thermal modeling of an uncooled microbolometer. In: European Microwave Conference in Central Europe (EuMCE), Prague, Czech Republic

Kaynak, Canan B. and Goeritz, A. and Yamamoto, Y. and Trusch, A. and Stocchi, M. and Wietstruck, M. and Ünal, Kadir Eren and Özdemir, Mehmet Bora and Özsoy, Yusuf and Gürbüz, Yaşar and Kaynak, Mehmet (2019) FEM modeling of microbolometer structures. In: MikroSystemTechnik 2019; Congress, Berlin, Germany

Kaynak, C. Baristiran and Yamamoto, Y. and Goeritz, A. and Korndoerfer, F. and Stocchi, M. and Wietstruck, M. and Gürbüz, Yaşar and Kaynak, M. (2019) Process effects on the noise performance of SiGe/Si multi quantum well thermistor. In: 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference, Madison, WI, USA

Baristiran-Kaynak, Canan and Göritz, A. and Yamamoto, Y. and Wietstruck, M. and Stocchi, M. and Ünal, Kadir Eren and Özdemir, Mehmet Bora and Özsoy, Yusuf and Gürbüz, Yaşar and Kaynak, Mehmet (2019) Development and mechanical modeling of Si1-XGex/Si MQW based uncooled microbolometers in a 130 nm BiCMOS. In: 19th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA