Process effects on the noise performance of SiGe/Si multi quantum well thermistor

Warning The system is temporarily closed to updates for reporting purpose.

Kaynak, C. Baristiran and Yamamoto, Y. and Goeritz, A. and Korndoerfer, F. and Stocchi, M. and Wietstruck, M. and Gürbüz, Yaşar and Kaynak, M. (2019) Process effects on the noise performance of SiGe/Si multi quantum well thermistor. In: 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference, Madison, WI, USA

Full text not available from this repository. (Request a copy)

Abstract

In this paper, the process effects of SiGe/Si multi quantum well (MQW) stack is presented in terms of its 1/f noise performance in an intrinsic thermal detector device. In particular, boron (B) doping in SiGe quantum wells and carbon (C) delta layer at SiGe/Si interfaces are analyzed by presenting the 1/f noise voltage power spectral densities. The results indicate that 1/f noise performance can be further improved by carbon delta layers while doping in SiGe quantum wells has no significant effect. Effects of the bias voltage and the pixel size of the thermistor are obtained very much similar to the expected trend. The overall achievements proves that the desired TCR and resistance values for high performance SiGe/Si MQW thermistor material can be achieved with a desired 1/f noise performance by the introduction of carbon delta layer at SiGe/Si interfaces and in-situ doping of the SiGe layers in the MQW stack.
Item Type: Papers in Conference Proceedings
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 01 Aug 2023 14:31
Last Modified: 01 Aug 2023 14:31
URI: https://research.sabanciuniv.edu/id/eprint/46683

Actions (login required)

View Item
View Item