System Implementation Of A 4x1 Mimo T/R Module And Ka-Band Low Noise Amplifiers For 5g Applications

Official URL: https://risc01.sabanciuniv.edu/record=b3205741

The demands for 5G systems are escalating rapidly, with a focus on higher data rates, lower latency, and long-distance communications. In order to fulfill these requirements, it is necessary to enhance noise suppression in receiver systems and to increase the linearity of communication links. Moreover, the power level of the signal is vital in compensating for the loss incurred through the air; hence, the gain of the system must be high enough. To meet these requirements, various approaches have been proposed, such as phased array systems, which comprise sub-blocks that manage the phase and amplitude of the system. By controlling these blocks, the direction and link distance can be regulated. In this thesis, the first step was implementing a system comprising 4x1 Multiple in Multiple Out (MIMO) chips and down/upconverter mixers. The system-level performance of these configurations was subsequently tested. A comparative analysis was conducted between 0.13 µm SiGe BiCMOS technology and 0.13 µm SiGe BiCMOS Cu technology with respect to their noise performance characteristics, which involves the design and testing of a low noise amplifier (LNA) in 0.13 µm SiGe BiCMOS Cu technology. After these evaluations, two distinct LNAs were designed using 0.13 µm SOI CMOS technology to improve the linearity. Their performance was analyzed and compared with the previously designed LNA.