Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications

Çalışkan, Can and Kalyoncu, İlker and Yazıcı, Melik and Kaynak, Mehmet and Gürbüz, Yaşar (2019) Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. IEEE Transactions on Circuits and Systems II: Express Briefs, 66 (9). pp. 1507-1511. ISSN 1549-7747 (Print) 1558-3791 (Online)

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This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors' knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
Item Type: Article
Uncontrolled Keywords: BiCMOS integrated circuits; Low-noise amplifier; noise; transceivers
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Can Çalışkan
Date Deposited: 31 Jul 2023 16:11
Last Modified: 31 Jul 2023 16:11
URI: https://research.sabanciuniv.edu/id/eprint/46653

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