Çalışkan, Can and Kalyoncu, İlker and Yazıcı, Melik and Kaynak, Mehmet and Gürbüz, Yaşar (2019) Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. IEEE Transactions on Circuits and Systems II: Express Briefs, 66 (9). pp. 1507-1511. ISSN 1549-7747 (Print) 1558-3791 (Online)
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Official URL: https://dx.doi.org/10.1109/TCSII.2019.2891133
Abstract
This brief presents, a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in common-emitter configuration. The presented amplifier stage can achieve sub-1 dB NF performance with 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors' knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | BiCMOS integrated circuits; Low-noise amplifier; noise; transceivers |
| Divisions: | Faculty of Engineering and Natural Sciences > Academic programs > Electronics Faculty of Engineering and Natural Sciences |
| Depositing User: | Can Çalışkan |
| Date Deposited: | 31 Jul 2023 16:11 |
| Last Modified: | 31 Jul 2023 16:11 |
| URI: | https://research.sabanciuniv.edu/id/eprint/46653 |
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Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. (deposited 01 Aug 2019 22:19)
- Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. (deposited 31 Jul 2023 16:11) [Currently Displayed]
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