Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications

Çalışkan, Can and Kalyoncu, İlker and Yazıcı, Melik and Kaynak, Mehmet and Gürbüz, Yaşar (2019) Ultra-low noise amplifier for x-band SiGe BiCMOS phased array applications. IEEE Transactions on Circuits and Systems II: Express Briefs . ISSN 1549-7747 (Print) 1558-3791 (Online) Published Online First http://dx.doi.org/10.1109/TCSII.2019.2891133

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Abstract

This paper presents a low noise amplifier (LNA) with sub-1dB noise figure (NF) at X-Band. Different than generally known noise-and-power match technique, the presented LNA is designed by considering impedance between the base-collector terminals of an HBT in CE configuration. The presented amplifier stage can achieve sub-1dB NF performance with 10 dB gain. The LNA dissipates 19.8 mW of dc power and has 0.77 dB NF while occupying 0.4 mm2. It succeeds 1.5 dBm of input-referred compression point. To the best of authors’ knowledge, the presented work achieves the best NF performance in the literature of any LNA that utilizes SiGe technology.
Item Type: Article
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 01 Aug 2019 22:19
Last Modified: 26 Apr 2022 10:09
URI: https://research.sabanciuniv.edu/id/eprint/38405

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