High responsivity power detectors for W/D-bands passive imaging systems in 0.13 mu m SiGe BiCMOS technology

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Üstündağ, Berktuğ and Türkmen, Eşref and Çetindoğan, Barbaros and Kaynak, Mehmet and Gürbüz, Yaşar (2019) High responsivity power detectors for W/D-bands passive imaging systems in 0.13 mu m SiGe BiCMOS technology. In: Asia-Pacific Microwave Conference (APMC), Kyoto, Japan

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Abstract

This paper presents the design, implementation and measurement results of power detectors (PDs) operating at W-band and D-band. Two detectors are designed and fabricated in 0.13μm SiGe BiCMOS technology. The measured minimum NEPs are 0.43 and 4.2 pW/Hz 1/2 , and the peak responsivities are 772 and 132 kV/W for the W-band and D-band power detectors, respectively. Both the PDs have wideband input matching to improve the performance over the entire bandwidth and occupy less than 0.37 mm 2 of area. The fabricated chips demonstrate the state-of-the-art responsivity performance to be utilized in W/Dbands radiometer systems.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: Millimeter wave detectors; Millimeter wave circuits; millimeter wave radiometry
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 28 Aug 2019 10:27
Last Modified: 12 Jun 2023 11:32
URI: https://research.sabanciuniv.edu/id/eprint/37954

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