Kaymaksüt, Ercan and Gürbüz, Yaşar and Tekin, İbrahim (2008) Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (Accepted/In Press)
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Abstract
This paper presents two miniature Impedance Matching Wilkinson Power Divider
circuits in 0.35μm SiGe BiCMOS technology for on-chip power combining techniques for
WLAN applications. The Impedance Matching Wilkinson Power Divider circuits are used as
splitter/combiner for a 5.2 GHz fully integrated class-A mode combined power amplifier. The
splitter and combiner are designed to match the input and output impedances of the amplifier,
respectively, so that no additional impedance matching is needed. Two fabricated impedance
matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better
than 1.4dB, return losses less than -13dB and port-to-port isolation > 12 dB at 5.2GHz.
Item Type: | Article |
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
Divisions: | Faculty of Engineering and Natural Sciences > Academic programs > Telecommunications Faculty of Engineering and Natural Sciences > Academic programs > Electronics Faculty of Engineering and Natural Sciences |
Depositing User: | İbrahim Tekin |
Date Deposited: | 07 Nov 2008 17:09 |
Last Modified: | 26 Apr 2022 08:22 |
URI: | https://research.sabanciuniv.edu/id/eprint/9804 |
Available Versions of this Item
-
Impedance Matching Wilkinson Power Dividers in 0.35μm
SiGe BiCMOS Technology. (deposited 27 Oct 2008 12:08)
- Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (deposited 07 Nov 2008 17:09) [Currently Displayed]