Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology

kaymaksut, Ercan and gurbuz, Yasar and Tekin, İbrahim (2008) Impedance Matching Wilkinson Power Dividers in 0.35μm SiGe BiCMOS Technology. (Accepted/In Press)

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Abstract

This paper presents two miniature Impedance Matching Wilkinson Power Divider circuits in 0.35μm SiGe BiCMOS technology for on-chip power combining techniques for WLAN applications. The Impedance Matching Wilkinson Power Divider circuits are used as splitter/combiner for a 5.2 GHz fully integrated class-A mode combined power amplifier. The splitter and combiner are designed to match the input and output impedances of the amplifier, respectively, so that no additional impedance matching is needed. Two fabricated impedance matching Wilkinson power divider circuits (splitter and combiner) have insertion losses better than 1.4dB, return losses less than -13dB and port-to-port isolation > 12 dB at 5.2GHz.
Item Type: Article
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Telecommunications
Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Depositing User: İbrahim Tekin
Date Deposited: 27 Oct 2008 12:08
Last Modified: 19 Jul 2019 14:20
URI: https://research.sabanciuniv.edu/id/eprint/9713

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