Sub-Terahertz And RFIC Implementatıons: DC-300 GHZSOIS Switch And Highly Efficient SIGE BICMOS PAS

Driven by the accelerating demands of high-throughput wireless communication,autonomous systems, and compact radar platforms, radio frequency (RF) andmillimeter-wave circuit design is undergoing a decisive shift toward higher frequencies.As systems transition beyond the conventional microwave spectrum into the Dband(110–170 GHz) and beyond, the development of wideband, power-efficient, andcompact circuit blocks becomes essential. Applications such as 100 Gb/s backhaullinks for 5G/6G networks, short-range radar for robotics and automotive sensing,and gesture-controlled wearable electronics require highly integrated, broadbandtransceiver front-ends capable of operating deep into the millimeter-wave regime.This thesis addresses these emerging challenges through the design and implementationof core RF/millimeter-wave front-end components. First, a high-efficiency,small-area power amplifier with a modeling approach using IHP 0.13 μm SiGe BiCMOStechnology is presented, which is suitable for compact transceiver, radar, orsensor applications. Secondly, power combined PAs consisting of 2-way and 4-waypower combination at 160 GHz are presented to offer a less efficient, larger area;however, a larger output version is given for reaching further distances for the systems.Finally, a DC-300 GHz switch was provided, enabling multi-band operation,therefore allowing for access to the advantages of both lower frequency bands andhigher frequency bands. Each block’s design and implementation methodology isshowcased and compared with the current state-of-the-art, achieving a performancecomparable to or better than the current state-of-the-art.