Electronic transport properties of Janus Ge2PAs monolayer: a prototype 2D metal-semiconductor-metal device

Official URL: https://dx.doi.org/10.1063/5.0283827

The semiconductor industry’s quest for miniaturization has driven the exploration of new materials and innovative designs. Among these, two-dimensional (2D) semiconductor materials have emerged as promising candidates due to their unique electrical conductivity and superior carrier transport properties, which address the limitations of conventional bulk semiconductors at the nanoscale. Understanding the electronic transport properties of 2D materials is essential for unlocking their full potential in emerging nanoelectronic applications. In this context, our study focuses on the transport characteristics of Janus Ge 2 PAs monolayer-based metal-semiconductor-metal (MSM) devices. Utilizing DFT (density functional theory) simulations coupled with the nonequilibrium Green’s function method, we explore the effects of external factors, such as channel length and electrode doping concentration on device performance in the ballistic region (sub-10 nm). By modeling two-probe MSM nanodevices, we analyze transmission coefficients [ T ( E ) ] under varying bias voltages and study the I-V characteristics’ dependence on channel lengths and doping concentrations. Our findings provide valuable insights into the electronic transport properties of the Janus Ge 2 PAs monolayer and offer guidance for the design and optimization of 2D material-based nanoelectronic devices.