Design of high isolation and low actuation voltage micro cantilever RF-MEMS switch for enhanced performance in mm-wave applications

Official URL: https://dx.doi.org/10.1109/EuroSimE65125.2025.11006556

One of the significant challenges in advancing RF-MEMS switch technology is achieving low actuation voltage and high capacitance ratio, simultaneously. Reducing the structural spring constant and integrating Metal-Insulator-Metal (MIM) capacitors have been recognized as optimal strategies for lowering actuation voltage; while significantly improving the capacitance ratio in RF-MEMS switches. This study aims to design and development of an RF-MEMS shunt switch in which a cantilever microbeam with a MIM capacitor is integrated to enhance the RF performance in mm-wave frequency band. Simulation using COMSOL®, revealed that the actuation voltage, von mises stress, first resonance frequency mode, switch mass, and the spring constant of the designed switch is about 2.3 V, 5.16 MPa, 1352 Hz, 1.62 µg, and 0.017 N.m-1, respectively; which are promising results. The switch's performance was evaluated across a wide frequency range from 1 to 100 GHz using ANSYS HFSS® simulation The simulation results indicate excellent radio frequency characteristics, i.e. isolation of -52 dB across the frequency range of 70 GHz to 75 GHz, with an insertion loss of -1 dB at 73 GHz and capacitance ratio of 142. These results highlight the favorable RF performance of the proposed switch, which is suitable for next-generation mm-wave applications.