Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces

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Yi, W. and Kaya, İsmet İnönü and Altfeder, I. B. and Appelbaum, I. and Chen, D. M. and Narayanamurti, V. (2005) Dual-probe scanning tunneling microscope for study of nanoscale metal-semiconductor interfaces. Review of scientific instruments, 76 (6). ISSN 0034-6748

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Official URL: http://dx.doi.org/10.1063/1.1938969

Abstract

Using a dual-probe scanning tunneling microscope, we have performed three-terminal ballistic electron emission spectroscopy on Au/GaAs(100) by contacting the patterned metallic thin film with one tip and injecting ballistic electrons with another tip. The collector current spectra agree with a Monte-Carlo simulation based on modified planar tunneling theory. Our results suggest that it is possible to study nanoscale metal-semiconductor interfaces without the requirement of an externally-contacted continuous metal thin film.

Item Type:	Article
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Engineering and Natural Sciences
Depositing User:	İsmet İnönü Kaya
Date Deposited:	18 Oct 2005 03:00
Last Modified:	22 Oct 2019 15:51
URI:	https://research.sabanciuniv.edu/id/eprint/508

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