Özkan, Tahsin Alper and Veziroğlu, Nezih Kaan and Firouz, Samira and Ceylan, Ömer and Gürbüz, Yaşar (2024) A low phase noise cross-coupled VCO for x-band applications in 0.13μm SiGe BiCMOS technology. In: 67th International Midwest Symposium on Circuits and Systems (MWSCAS), Springfield, MA, USA
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Official URL: https://dx.doi.org/10.1109/MWSCAS60917.2024.10658874
Abstract
This paper presents a low-power low phase noise voltage-controlled oscillator (VCO) in X-band frequencies fabricated in IHP's 130nm SiGe BiCMOS process (ft/fmax of 250/340 GHz). The core of the VCO is based on a cross-coupled (CC) pair. The phase noise performance of the VCO improved by utilizing a passive LC filter in the tail. The VCO employs a varactor linearization technique to increase the tuning range (TR) and further widen TR achieved by using a thick gate oxide MOS varactor and switched capacitor banks. The VCO core is isolated using cascode buffers, allowing proper driving capability. The design achieves phase noise of -119.25 dBclHz at 1 MHz offset at the center frequency and TR of 15.88 %. The circuit occupies a die area, including the output balun and pads, of 2.08mm2 and consumes 28.7mW power.
Item Type: | Papers in Conference Proceedings |
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Uncontrolled Keywords: | BiCMOS; SiGe; varactor; voltage-controlled os-cillator; X-band |
Divisions: | Faculty of Engineering and Natural Sciences |
Depositing User: | Yaşar Gürbüz |
Date Deposited: | 05 Dec 2024 14:38 |
Last Modified: | 05 Dec 2024 14:38 |
URI: | https://research.sabanciuniv.edu/id/eprint/50493 |