Martínez, José Ignacio and Laikhtman, Alex and Zak, Alla and Sezen, Meltem and Alonso, Julio A. (2024) Implantation of gallium into layered WS2 nanostructures is facilitated by hydrogenation. Small . ISSN 1613-6810 (Print) 1613-6829 (Online) Published Online First https://dx.doi.org/10.1002/smll.202312235
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Official URL: https://dx.doi.org/10.1002/smll.202312235
Abstract
Bombarding WS2 multilayered nanoparticles and nanotubes with focused ion beams of Ga+ ions at high doses, larger than 1016 cm−2, leads to drastic structural changes and melting of the material. At lower doses, when the damage is negligible or significantly smaller, the amount of implanted Ga is very small. A substantial increase in the amount of implanted Ga, and not appreciable structural damage, are observed in nanoparticles previously hydrogenated by a radio-frequency activated hydrogen plasma. Density functional calculations reveal that the implantation of Ga in the spaces between adjacent layers of pristine WS2 nanoparticles is difficult due to the presence of activation barriers. In contrast, in hydrogenated WS2, the hydrogen molecules are able to intercalate in between adjacent layers of the WS2 nanoparticles, giving rise to the expansion of the interlayer distances, that in practice leads to the vanishing of the activation barrier for Ga implantation. This facilitates the implantation of Ga atoms in the irradiation experiments.
Item Type: | Article |
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Uncontrolled Keywords: | gallium; hydrogenation; implantation; multilayers; simulation; tungsten disulfide |
Divisions: | Sabancı University Nanotechnology Research and Application Center |
Depositing User: | Meltem Sezen |
Date Deposited: | 09 Jun 2024 15:11 |
Last Modified: | 09 Jun 2024 15:11 |
URI: | https://research.sabanciuniv.edu/id/eprint/49193 |