Baristiran Kaynak, C. and Yamamoto, Y. and Göritz, A. and Korndörfer, F. and Zaumseil, P. and Kulse, P. and Schulz, K. and Fraschke, M. and Marschmeyer, S. and Wolansky, D. and Wietstruck, M. and Shafique, Atia and Gürbüz, Yaşar and Kaynak, Mehmet (2018) Si1-xGex/Si MQW based uncooled microbolometer development and integration into 130 nm BiCMOS technology. In: 8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting, Cancun, Mexico
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Official URL: https://dx.doi.org/10.1149/08607.0373ecst
Abstract
In this paper, the recent progress on Sii-xGeVSi based high performance detector structures is presented. The process optimization of the detector by means of high TCR, low 1/f noise and appropriate resistance is summarized. The method of integrating the developed Sii-xGex/Si multi quantum well (MQW) detector structures into a 130 nm BiCMOS process is provided. The optimization studies required for the full integration of the suspended uncooled microbolometer device are presented.
| Item Type: | Papers in Conference Proceedings |
|---|---|
| Divisions: | Faculty of Engineering and Natural Sciences |
| Depositing User: | Yaşar Gürbüz |
| Date Deposited: | 31 Jul 2023 16:01 |
| Last Modified: | 31 Jul 2023 16:01 |
| URI: | https://research.sabanciuniv.edu/id/eprint/46618 |
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