Automation of electro-thermal simulations based on thermal conductivity optimization

Official URL: https://dx.doi.org/10.1109/EuroSimE.2018.8369872

In this paper, an automated extraction method to optimize the thermal conductivity of silicon is proposed. The approach is based on the electrical and thermal co-simulation of SiGe HBTs. The bisection method is used to optimize silicon conductivity values. The optimized material stack is embedded in the process design kit and allows designers to perform computing of the full-chip temperature profile and get accurate simulation results. The overall investigation is confirmed by measurements performed on bulk-silicon HBTs. Comparison between the simulations and the measurements shows that the maximum mismatch of %5 is achieved for the RTH values.