Investigating the current distribution of parallel-configured quantum point contacts under quantum Hall conditions

Official URL: https://dx.doi.org/10.1007/s10825-021-01815-3

Electric-field-controlled charge transport is a crucial concept of modern computers, embodied, namely in field-effect transistors. The metallic gate voltage controls the charge population. Thus, it is possible to define logical elements which are the key to computational processes. Here, we investigate a similar system defined by metallic gates inducing quasi-one-dimensional transport channels on a high-mobility electron system in the presence of a strong perpendicular magnetic field. Firstly, we solve the three-dimensional Poisson equation, self-consistently imposing relevant boundary conditions and use the output as an initial condition to calculate charge density and potential distribution in the plane of a two-dimensional electron system in the presence of an external magnetic field. Subsequently, we impose an external current and obtain the spatial distribution of the transport charges, considering the various magnetic field and gate voltage strengths at sufficiently low (<10 Kelvin) temperatures. Finally, we show that the magnetic field breaks the spatial symmetry of the current distribution, whereas voltage applied to metallic gates determines the scattering processes.