A 6-mW w-band LNA in 0.13µm SiGe BiCMOS for passive imaging systems

Official URL: http://dx.doi.org/10.1109/MWSCAS48704.2020.9184517

In this work, a W-band SiGe BiCMOS Low Noise Amplifier (LNA) that achieves 18 dB peak gain at 88 GHz with 6 mW of quiescent power consumption is presented. The LNA has a measured 3-dB bandwidth of 23 GHz and the minimum noise figure is 4.9 dB at 93 GHz and lower than 6.2 dB across the W-band. The LNA’s gain can be raised to 22dB by increasing the supply voltages with a negligible variance in matching performance at the cost of increased DC power consumption. Inductors were preferred to transmission lines for a reduction in the chip area, down to an effective area of 0.2mm 2 . Coherency between simulations and measurement results show that the LNA is suitable for use in a state-of-the-art low-power radiometer system.