Çalışkan, Can and Yazıcı, Melik and Kaynak, Mehmet and Gürbüz, Yaşar (2019) A switchless SiGe BiCMOS bidirectional amplifier for wideband radar applications. IEEE Transactions on Circuits and Systems II: Express Briefs . ISSN 1549-7747 (Print) 1558-3791 (Online) Published Online First http://dx.doi.org/10.1109/TCSII.2019.2945862
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Official URL: http://dx.doi.org/10.1109/TCSII.2019.2945862
Abstract
This paper presents a switchless bidirectional amplifier (BDA) with 7-to-30 GHz of bandwidth (BW) and 11.2 dB of peak gain. Common impedance matching networks (IMN) are utilized for both directions, to form a low power and compact amplification stage. It achieves + 0.58 dB/BW of a gain slope, which reaches its peak value at 21 GHz. Its output-referred 1-dB compression point (OP1dB) and group delay (GD) are measured as -2.5 dBm and 41 psec. while having ± 1.5 dB and ± 9.1 psec. variation over the defined BW. Moreover, the BDA dissipates 14 mW of power in 0.42 mm2 of area (including pads). The measurement results demonstrate that the BDA is compatible with the wideband transceiver systems. To the best of the authors’ knowledge, the presented design has the best operating bandwidth with a positively sloped gain without sacrificing from the area, power consumption and other remaining RF features such as noise figure (NF).
Item Type: | Article |
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Divisions: | Faculty of Engineering and Natural Sciences > Academic programs > Electronics Faculty of Engineering and Natural Sciences |
Depositing User: | Yaşar Gürbüz |
Date Deposited: | 17 Sep 2020 19:52 |
Last Modified: | 17 Sep 2020 19:52 |
URI: | https://research.sabanciuniv.edu/id/eprint/40232 |
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- A switchless SiGe BiCMOS bidirectional amplifier for wideband radar applications. (deposited 17 Sep 2020 19:52) [Currently Displayed]