Low-noise amplifiers for w-band and d-band passive imaging systems in SiGe BiCMOS technology

Üstündağ, Berktuğ and Türkmen, Eşref and Çetindoğan, Barbaros and Güner, Alper and Kaynak, Mehmet and Gürbüz, Yaşar (2019) Low-noise amplifiers for w-band and d-band passive imaging systems in SiGe BiCMOS technology. In: Asia-Pacific Microwave Conference (APMC), Kyoto, Japan

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Abstract

In this paper, two wideband and low power mmwave LNAs implemented in a 0.13μm SiGe BiCMOS technology are presented. The W-band LNA has 22.3 dB peak gain, 17 GHz 3-dB bandwidth (BW) and 8 mW of power consumption whereas the D-Band LNA achieves 25.3 dB peak gain, 44 GHz 3-dB BW while consuming 30 mW of power. Input and output of the LNAs are wideband matched to 50 Ω in their respective frequency bands. Using the measured gains, the effective noise bandwidths are calculated to be 33.8 GHz for the W-band and 58.9 GHz for the Dband LNAs. Measurement results indicate that the LNAs are suitable for low power and wideband radiometer systems.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: millimeter wave integrated circuits; low-noise amplifier; millimeter wave radiometry
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 28 Aug 2019 10:34
Last Modified: 26 Apr 2022 09:32
URI: https://research.sabanciuniv.edu/id/eprint/37955

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