Low-noise amplifiers for w-band and d-band passive imaging systems in SiGe BiCMOS technology

Official URL: http://dx.doi.org/10.23919/APMC.2018.8617582

In this paper, two wideband and low power mmwave LNAs implemented in a 0.13μm SiGe BiCMOS technology are presented. The W-band LNA has 22.3 dB peak gain, 17 GHz 3-dB bandwidth (BW) and 8 mW of power consumption whereas the D-Band LNA achieves 25.3 dB peak gain, 44 GHz 3-dB BW while consuming 30 mW of power. Input and output of the LNAs are wideband matched to 50 Ω in their respective frequency bands. Using the measured gains, the effective noise bandwidths are calculated to be 33.8 GHz for the W-band and 58.9 GHz for the Dband LNAs. Measurement results indicate that the LNAs are suitable for low power and wideband radiometer systems.