Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity

Official URL: http://dx.doi.org/10.1117/12.2305003

This paper presents the physical device modeling of a Si/Si1-xGex multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si1-xGex well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si1-xGex heterointerface and quantum confinement within the Si/Si1-xGex MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si/Si1-xGex wells with an active area of 17μm x 17μm were investigated and compared with experiment data.