High performance thermistor based on Si1-xGex/Si multi quantum wells

Official URL: http://dx.doi.org/10.1109/LED.2018.2821710

This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si1-xGex/Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K-1/f). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of -5.5 %/K accompanied by a K-1/f of 5.8 x 10(-13) for 25 mu m x 25 mu m and 3.4 x 10(-15) for 200 mu m x 200 mu m pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.