Broadband infrared reflective surfaces using doped and stacked polar dielectric layers

Official URL: http://dx.doi.org/10.1063/1.5021650

Polar dielectrics, such as SiC, are excellent candidates for operation in extreme environments due to their excellent mechanical and thermal properties. In addition, they can achieve good IR reflection in the Reststrahlen band. However, these materials have relatively narrow spectral bandwidth for reflection, especially considering that the broadband illumination sources in extreme environments. In this study, we investigated the broadband reflection properties of polar dielectrics by engineering the Reststrahlen band through doping and stacked layers. Our results indicate that by doping polar dielectrics, spectral reflection bandwidth can be significantly broadened. In addition, we demonstrate that by stacking different polar dielectric layers, the reflection spectrum of different materials can be overlapped, and thereby, significantly broader spectrum is obtained.