0.13-μm SiGe BiCMOS technology with More-than-Moore modules

Official URL: http://dx.doi.org/10.1109/BCTM.2017.8112912

This paper presents three different technology modules, integrated into a 0.13-μm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The BiCMOS process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.