Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces

Official URL: http://dx.doi.org/10.1117/12.2263965

Carrier distribution of semiconductors (SCs) differs from metals where they can give inhomogeneous carrier distributions like the classical Schottky junction. In this study, we show that the carrier distribution at a moderately doped semiconductor - dielectric (DE) interface can be tuned by applying external voltage, and then an inhomogeneous permittivity. Using the Maxwell's equations for doped semiconductor surfaces, we illustrate the voltage controlled tunability of plasmon and phonon polaritons.