Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces

Janipour, Mohsen and Mısırlıoğlu, Burç and Şendur, Kürşat (2017) Voltage control of surface plasmon and phonon interactions in doped semiconductor-dielectric interfaces. In: Physics and Simulation of Optoelectronic Devices XXV, San Francisco; United States

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Abstract

Carrier distribution of semiconductors (SCs) differs from metals where they can give inhomogeneous carrier distributions like the classical Schottky junction. In this study, we show that the carrier distribution at a moderately doped semiconductor - dielectric (DE) interface can be tuned by applying external voltage, and then an inhomogeneous permittivity. Using the Maxwell's equations for doped semiconductor surfaces, we illustrate the voltage controlled tunability of plasmon and phonon polaritons.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: Doped-Semiconductor; Tunable surface Plasmon and Phonon resonances
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Mechatronics
Faculty of Engineering and Natural Sciences > Academic programs > Materials Science & Eng.
Faculty of Engineering and Natural Sciences
Depositing User: Kürşat Şendur
Date Deposited: 01 Jun 2017 11:59
Last Modified: 26 Apr 2022 09:26
URI: https://research.sabanciuniv.edu/id/eprint/32287

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