Khassaf, Hamidreza and Ibanescu, G. A. and Pintilie, I. and Mısırlıoğlu, Burç and Pintilie, L. (2012) Potential barrier increase due to Gd doping of BiFeO3 layers in Nb:SrTiO3-BiFeO3-Pt structures displaying diode-like behavior. Applied Physics Letters, 100 (25). ISSN 0003-6951 (Print) 1077-3118 (Online)
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Official URL: http://dx.doi.org/10.1063/1.4729816
Abstract
The rectifying properties of Nb:SrTiO3-Bi1-xGdxFeO3-Pt structures (x = 0, 0.05, 0.1) displaying diode-like behavior were investigated via current-voltage characteristics at different temperatures. The potential barrier was estimated for negative polarity assuming a Schottky-like thermionic emission with injection controlled by the interface and the drift controlled by the bulk. The height of the potential barrier at the Nb:SrTiO3-Bi1-xGdxFeO3 interface increases with Gd doping. The results are explained by the partial compensation of the p-type conduction due to Bi vacancies with Gd doping in addition to the shift of the Fermi level towards the middle of the bandgap with increasing dopant concentration.
| Item Type: | Article |
|---|---|
| Additional Information: | Article Number: 252903 |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Engineering and Natural Sciences > Academic programs > Materials Science & Eng. Faculty of Engineering and Natural Sciences |
| Depositing User: | Burç Mısırlıoğlu |
| Date Deposited: | 27 Oct 2012 23:11 |
| Last Modified: | 31 Jul 2019 12:43 |
| URI: | https://research.sabanciuniv.edu/id/eprint/19897 |
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