CMOS SPDT T/R switch for X-band, on-chip radar applications

Official URL: http://dx.doi.org/10.1049/el.2010.2165

An SPDT transmit/receive (T/R) switch for X-band on-chip radar applications is proposed with the combination of new techniques. These methodologies include optimisation of the transistor widths for lower insertion loss (IL) while preserving high isolation and using a parallel resonance technique to improve isolation. Also, techniques such as applying DC bias to source and drain, using on-chip impedance transformation networks (ITN) and body-floating are used to improve power handling capability (P-1dB) of the switch. All these techniques result in the switch with insertion loss less than 1.3 dB, isolation between transmit and receive ports better than 29.2 dB, 29 dBm input P-1dB and return loss of better than 22 dB from 8 to 12 GHz in 0.44 mm(2) chip area.