Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications

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Esame, İbrahim Onur and Tekin, İbrahim and Bozkurt, Ayhan and Gürbüz, Yaşar (2007) Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications. International Journal of RF and Microwave Computer-Aided Engineering, 17 (2). pp. 243-251. ISSN 1096-4290

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Official URL: http://dx.doi.org/10.1002/mmce.20218


In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is -110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and -113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm(2) on Si substrate, including DC and RF pads.

Item Type:Article
Uncontrolled Keywords:VCO; SiGe; BiCMOS; WLAN; differential tuning; accumulation MOS varactors; RFIC
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:6148
Deposited By:İbrahim Tekin
Deposited On:23 Oct 2007 16:09
Last Modified:01 Jul 2010 15:06

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