High performance thermistor based on Si1-xGex/Si multi quantum wells
Barıştıran Kaynak, Canan and Yamamoto, Yuji and Goeritz, A. and Korndoerfer, F. and Zaumseil, P. and Kulse, P. and Schulz, K. and Wietstruck, M. and Shafique, Atia and Gürbüz, Yaşar and Kaynak, Mehmet (2018) High performance thermistor based on Si1-xGex/Si multi quantum wells. IEEE Electron Device Letters, 39 (5). pp. 753-756. ISSN 0741-3106 (Print) 1558-0563 (Online)
Official URL: http://dx.doi.org/10.1109/LED.2018.2821710
This letter represents a prototype of an intrinsic thermistor based on silicon-germanium/silicon (Si1-xGex/Si) multi quantum wells with varying Ge concentration in SiGe wells. Experimental results of the thermistor prototype are provided in terms of temperature coefficient of resistance (TCR) and noise constant (K-1/f). The prototype with 50% Ge in SiGe wells exhibited an outstanding TCR of -5.5 %/K accompanied by a K-1/f of 5.8 x 10(-13) for 25 mu m x 25 mu m and 3.4 x 10(-15) for 200 mu m x 200 mu m pixel size, showing the concurrent achievement of a very high TCR and a low 1/f noise performance.
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