0.13-μm SiGe BiCMOS technology with More-than-Moore modules

Warning The system is temporarily closed to updates for reporting purpose.

Kaynak, Mehmet and Wietstruck, Matthias and Göritz, Alexander and Wipf, Selin Tolunay and İnaç, Mesut and Çetindoğan, Barbaros and Wipf, Christian and Kaynak, Canan Baristiran and Wöhrmann, Markus and Voges, Steve and Braun, Tanja (2017) 0.13-μm SiGe BiCMOS technology with More-than-Moore modules. In: IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 2017), Miami, FL, USA

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1109/BCTM.2017.8112912


This paper presents three different technology modules, integrated into a 0.13-μm SiGe BiCMOS process; namely RF-MEMS switch, microfluidics and heterogeneous integration technologies. The RF-MEMS switch module is optimized for mm-wave applications and offers superior performance figures at D-band with a wafer level encapsulated packaging option. The microfluidics module which is embedded by bonding three different wafers, provides a unique platform of fluid-electronic interaction with possibility of optical observation. Finally, the FOWLP option provides the heterogeneous integration of a single or multi chips in a single package. The BiCMOS process together with the integration of all these modules offers a technology platform to follow the More-than-Moore path for multi-functional and smart systems.

Item Type:Papers in Conference Proceedings
ID Code:34193
Deposited By:Mehmet Kaynak
Deposited On:23 Jan 2018 10:52
Last Modified:23 Jan 2018 10:52

Repository Staff Only: item control page