An ultra-wideband SiGe BiCMOS LNA for w-band applications

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Öztürk, Efe and Seyyedesfahlan, Mirmehdi and Kaynak, Mehmet and Tekin, İbrahim (2015) An ultra-wideband SiGe BiCMOS LNA for w-band applications. Microwave and Optical Technology Letters, 57 (6). pp. 1274-1278. ISSN 0895-2477 (Print) 1098-2760 (Online)

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Official URL: http://dx.doi.org/10.1002/mop.29076


This article presents the design steps and implementation of a W-band ultra-wideband low noise amplifier (LNA) for both automotive and imaging applications. Three amplifiers based on common-emitter topology with different configurations are manufactured using IHP 0.13 mu m SiGe BiCMOS 300/500 GHz (f(t)/f(max)) SG13G2 technology. A three-stage single-ended structure is proposed for ultra-wideband imaging purposes. As the results are analyzed, this 0.2 mm(2) LNA can operate in a 25 GHz of measured 3-dB bandwidth in W-band with 21 dB peak gain and 4.9 dB average noise figure using 1.5 V supply voltage. It consumes 50 mW of power in the edge operation conditions and the output 1 dB compression point is found as -4 dBm. To the authors' knowledge, this chip achieves one of the best overall performances compared to other W-band LNAs.

Item Type:Article
Uncontrolled Keywords:automotive radar; imaging applications; SiGe BiCMOS 0; 13 mu m; W-band low noise amplifier
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
ID Code:27835
Deposited By:İbrahim Tekin
Deposited On:17 Dec 2015 10:51
Last Modified:23 Aug 2019 12:23

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