A tunable X-band SiGe HBT single stage cascode LNA

Warning The system is temporarily closed to updates for reporting purpose.

Doğan, Mustafa and Tekin, İbrahim (2010) A tunable X-band SiGe HBT single stage cascode LNA. In: 10th Mediterranean Microwave Symposium 2010 (MMS'2010), Northern Cyprus

[img]PDF - Requires a PDF viewer such as GSview, Xpdf or Adobe Acrobat Reader


This paper presents an X-band silicon-germanium (SiGe) single stage cascode tunable low-noise amplifier (LNA) for active phased array transmit/receive modules. LNA is implemented by using IHP SiGe heterojunction bipolar transistors (HBTs) 0.25-μm SGB25V technology. Cadence is used in collaboration with ADS during schematic and layout design and the results depict that designed LNA dissipates 15.36 mW from an 2.4 V DC power supply and the maximum gain around 18 dB in X-band while not exceeding the 2.4 dB noise figure (NF). Reverse gain of the LNA is very low (<-40 dB). Input terminal is matched so that S11 is below -10 dB in X-band.

Item Type:Papers in Conference Proceedings
Uncontrolled Keywords:Low-noise amplifier (LNA); silicon-germanium (SiGe); heterojunction bipolar transistor (HBT); noise figure (NF); X-band.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
ID Code:14742
Deposited By:İbrahim Tekin
Deposited On:20 Oct 2010 11:48
Last Modified:25 Jul 2019 16:39

Repository Staff Only: item control page