Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology
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Esame, İbrahim Onur and Tekin, İbrahim and Gürbüz, Yaşar and Bozkurt, Ayhan and Kuntman, Ayten. (2006) Design of a 4.2-5.4 GHz Differential LC VCO using 0.35 m SiGe BiCMOS Technology. In: IEEE Sarnoff Symposium, Nassau Inn in Princeton, NJ, USA
Official URL: http://www3.interscience.wiley.com/cgi-bin/abstract/114133670/ABSTRACT?CRETRY=1&SRETRY=0
In this paper, a 4.2-5.4 GHz, Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35´m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). Phase noise is -110.7 dBc/Hz at 1MHz offset from 5.4 GHz carrier frequency and -113.5 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained utilizing accumulation-mode varactors. Phase noise is relatively low due to taking the advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. The circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit occupies an area of 0.6 mm2 on Si substrate including RF and DC pads.
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