Wietstruck, M. and Marschmeyer, S. and Voß, T. and Inac, M. and Lisker, M. and Krüger, A. and Wolansky, D. and Kulse, P. and Schulz, K. and Katzer, J. and Göritz, A. and Mai, A. and Kaynak, Mehmet (2017) 200 mm silicon wafer with buried 3D etchstop layer for flexible-sized via-middle tsvs in a CMOS/BiCMOS technology (200 mm silizium wafer mit vergrabenen 3D-atzstoppschichten für flexible via-middle TSVs in CMOS/BiCMOS technologien). In: MikroSystemTechnik Kongress 2017: MEMS, Mikroelektronik, Systeme - MikroSystemTechnik Conference 2017: MEMS, Microelectronics, Systems, Munchen
Full text not available from this repository. (Request a copy)Abstract
In this work, the development of engineered silicon substrates for a novel via-middle TSV integration concept is demonstrated. These substrates include 3D buried etch-stop layers which provide both an ideal vertical and lateral etch-stop for TSV trench etching thus enabling the simultaneous realization of different size of TSVs on the same silicon substrate. As a result, the developed technique is very promising to realize different dimensions of TSVs on the same substrate for future smart system applications.
| Item Type: | Papers in Conference Proceedings |
|---|---|
| Divisions: | Faculty of Engineering and Natural Sciences > Academic programs > Electronics Faculty of Engineering and Natural Sciences |
| Depositing User: | Mehmet Kaynak |
| Date Deposited: | 23 Oct 2026 12:03 |
| Last Modified: | 23 Oct 2026 12:03 |
| URI: | https://research.sabanciuniv.edu/id/eprint/55592 |
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