SiGe BiCMOS technology with embedded through-silicon vias and interposer fan-out wafer-level packaging platform

In this paper, the latest developments of a high performance SiGe BiCMOS technology with embedded Through-Silicon Vias and an additional Fan-out Wafer-level Packaging platform based on a silicon interposer and direct wafer bonding are demonstrated. The combination of a SiGe BiCMOS technology including heterojunction bipolar transistors with fmax values of ~500 GHz together with the aforementioned packaging technology modules are explained. Both SiGe BiCMOS with monolithically integrated TSVs together with interposer and a novel Al-Al wafer bonding integration technique are realized to provide high performance and low-cost packaging platforms for mm-wave and THz 2.5/3D heterogeneous integration.