Finite-element modelling of stress induced wafer warpage for a full BiCMOS process

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Cao, Zhibo and Göritz, Alexander and Wietstruck, Matthias and Wipf, Selin Tolunay and Trusch, Andreas and Kaynak, Mehmet (2019) Finite-element modelling of stress induced wafer warpage for a full BiCMOS process. In: IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Orlando, FL, USA

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Abstract

A finite element method (FEM) wafer scale model considering all the process details, e.g. metal patterning, via etching, etc., is built for a state-of-the-art 0.13-μm SiGe BiCMOS fully processed 8-inch wafer. Associated layer residual stress and wafer warpage are extracted and compared with hand calculation and experimental results. The comparison results show that the wafer warpage predicted by FEM model demonstrates only about 10 μm maximum deviation over an 80 μm -bowed wafer. An accurate stress model for an 8-inch wafer including full BiCMOS process is successfully developed and validated.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: ANSYS; bow measurement; finite element method; full BiCMOS; Stoney equation
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Mehmet Kaynak
Date Deposited: 23 Jul 2023 12:12
Last Modified: 23 Jul 2023 12:12
URI: https://research.sabanciuniv.edu/id/eprint/46178

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