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Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate

Kaneko, Satoru and Tokumasu, Takashi and Nakamaru, Yoshimi and Kokubun, Chiemi and Konda, Kayoko and Yasui, Manabu and Kurouchi, Masahito and Can, Musa and Shawuti, Shalima and Sudo, Rieko and Endo, Tamio and Yasuhara, Shigeo and Matsuda, Akifumi and Yoshimoto, Mamoru (2019) Constriction of a lattice constant in an epitaxial magnesium oxide film deposited on a silicon substrate. In: 10th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2018), and 11th International Conference on Plasma-Nano Technology and Science (IC-PLANT2018), Nagoya, Japan

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Abstract

We demonstrated epitaxial growth of magnesium oxide (MgO) on a silicon (Si) substrate with cubic on cubic structure [MgO(001)//Si(001) and MgO(100)//Si(100)]. Epitaxial films were prepared using the pulsed laser deposition method, and with dependent on deposition conditions of oxygen partial pressure and substrate temperature, the lattice constants of MgO decreased along both the surface normal and in-plane directions. To support the facts of (1) constriction of lattice constants and (2) cubic on cubic growth, we show (1) optimal lattice constants with defects in the crystal structure, (2) domain mismatch between MgO and Si instead of lattice mismatch, and (3) stability of MgO crystals on the surface of the Si substrate.
Item Type: Papers in Conference Proceedings
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Shalima Shawuti
Date Deposited: 12 Jun 2023 14:33
Last Modified: 12 Jun 2023 14:34
URI: https://research.sabanciuniv.edu/id/eprint/46015

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