Development of a through-silicon via (TSV) process module for multi-project wafer SiGe BiCMOS and silicon interposer

Official URL: https://dx.doi.org/10.1109/ECTC.2018.00341

In this work, the development of a Through-Silicon Via process module for multi-project wafer SiGe BiCMOS and silicon interposer is demonstrated. The TSV technology based on a via-middle approach is optimized to provide TSV process and design flexibility which is required for a multi-project wafer service. Different passive and active TSV-based components like a low-noise amplifier, RF interposer transmission lines and substrate-integrated waveguides are fabricated. The TSV process module enables a wide range of promising new applications by adding additional functionalities to conventional BiCMOS and interposer substrate technologies.