High voltage LDMOS inverter for on-chip RF-MEMS actuation

Wipf, C. and Sorge, R. and Göritz, A. and Wipf, S. Tolunay and Scheit, A. and Kissinger, D. and Kaynak, Mehmet (2018) High voltage LDMOS inverter for on-chip RF-MEMS actuation. In: IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Anaheim, CA, USA

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In this work, two high voltage LDMOS inverters, a charge pump and a differential ring oscillator are designed and combined with a Ka-band RF-MEMS SPDT (single-pole double-throw) switch in a single BiCMOS chip. The circuit is fabricated in a triple well 0.25 μm SiGe:C BiCMOS process which includes a LDMOS- and a RF-MEMS module. The measured rise and fall times of the high voltage inverter are below 2.5 μs and 2 μs considering a 65 pF capacitor in parallel with a 1 MΩ resistor as the load caused by the measurement setup. Simulations based on the RF-MEMS electrode capacitance of ∼200 fF - as the real case application - result in a drastically decreased rise (charge) time and fall (discharge) time of 10 ns and 8 ns, respectively. The maximum operating voltage of the LDMOS inverter is 45 V, which enables the actuation of the RF-MEMS switch. The measured S-parameters of the RF-MEMS SPDT switch, driven by the developed LDMOS inverters and charge pump, demonstrate the successful implementation.
Item Type: Papers in Conference Proceedings
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Mehmet Kaynak
Date Deposited: 03 Jun 2023 19:51
Last Modified: 03 Jun 2023 19:51
URI: https://research.sabanciuniv.edu/id/eprint/45827

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