X-to-K band 6-bit bidirectional common chain SiGe BiCMOS for multi-band arrays

Çalışkan, Can and Yazıcı, Melik and Gürbüz, Yaşar (2022) X-to-K band 6-bit bidirectional common chain SiGe BiCMOS for multi-band arrays. In: IEEE International Symposium on Circuits and Systems (ISCAS), Austin, TX, USA

Full text not available from this repository. (Request a copy)


In this work, an 8-to-24 GHz 6-bit bidirectional Common-Chain (CC) is presented that enables low noise, wide bandwidth (BW) compact core-chip in SiGe BiCMOS with low power dissipation. The chain contains phase shifter (PS), attenuator and HBT based active bidirectional amplifiers (BDAs). The PS is designed considering multiple resonance frequencies for an improved BW. The attenuator's device sizes are determined for low phase variation. The loss of these blocks are tolerated by BDAs, which are also utilized to generate new LSBs for phase and amplitude control. The CC succeeds 16.12 dB peak gain at 21.5 GHz and + 2.58dB/BW of a gain slope. It achieves a mean 4.41°/0.4dB RMS errors for 16 GHz of BW, while dissipating 55 mW of power in a 3.28 mm2 area. To the best of authors' knowledge, this work succeeds the best gain, noise, resolution, and SWaP-C features for 100% of fractional BW in SiGe BiCMOS.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: attenuator; BiCMOS integrated circuits; equalizer; low-noise amplifier; phase shifter; phased arrays; power amplifier; Silicon germanium; transceivers; wideband
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Can Çalışkan
Date Deposited: 05 Apr 2023 15:37
Last Modified: 05 Apr 2023 15:37
URI: https://research.sabanciuniv.edu/id/eprint/45195

Actions (login required)

View Item
View Item