A high linearity 6 GHz LNA in 130 nm SiGe technology

Özdöl, Ali Bahadır and Kandiş, Hamza and Burak, Abdurrahman and Özkan, Tahsin Alper and Kaynak, Mehmet and Gürbüz, Yaşar (2022) A high linearity 6 GHz LNA in 130 nm SiGe technology. In: 17th European Microwave Integrated Circuits Conference (EuMIC), Milan, Italy

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In this work, a high linearity LNA at 6 GHz with 1.15 dB NF, 27.7 dB gain is reported with IHP 130nm SiGe BiCMOS technology. The reported LNA achieves a highly linear performance and has -12.2 dBm IP1dB and 4.2 dBm IIP3. A two-stage cascode amplifier with inductive degeneration topology is used to obtain high gain. Optimum transistor biasing and sizing achieves an input matching without using any inductor which allowed low NF and high linearity. Additionally, custom, not PDK defined, transistor layouts have been created to decrease the core's parasitics to enhance the LNA's performance. LNA uses 3.3V as supply and consumes 98 mW DC power while occupying a 0.75 mm2 die area without pads. The reported LNA achieved one of the highest figures-of-merit among silicon-based LNAs and has comparable performance to SOI CMOS LNAs.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: Cascode; HBT; high linearity; IIP3; IP1dB; low noise amplifier; NF; WLAN
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 04 Apr 2023 16:13
Last Modified: 04 Apr 2023 16:13
URI: https://research.sabanciuniv.edu/id/eprint/45180

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