A phase coherent DC-25 GHz 6-bit SiGe BiCMOS step attenuator with IP1dB >20 dBm

Kandiş, Hamza and Burak, Abdurrahman and Kana, Cengizhan and Yazıcı, Melik and Gürbüz, Yaşar (2022) A phase coherent DC-25 GHz 6-bit SiGe BiCMOS step attenuator with IP1dB >20 dBm. In: 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom

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This paper presents a 6-bit step attenuator with high linearity and very low RMS amplitude and phase errors from DC to 25 GHz. The presented attenuator was designed with hybrid Π/T-type attenuation blocks. Isolated NMOS (iNMOS) devices were utilized instead of conventional NMOS transistors since iNMOS devices have fewer parasitics than its counterpart. This feature provides to keep the slope of the insertion loss (IL) constant and improves the power handling capability of the designed attenuator. This design was fabricated with IHP's 130 nm SiGe BiCMOS technology. The measured attenuator has a dynamic range of 23.96 dB with 0.38 dB fine steps. The RMS amplitude error of the designed attenuator is <0.38 dB from DC to 25 GHz. The maximum measured RMS phase error is 2.4° at 25 GHz. The measured IP 1dB is > 20 dBm at 7.5 GHz and 12.5 GHz.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: amplitude/phase control; high linearity; Hybrid Pi/T-type; isolated NMOS (iNMOS); wideband
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Melik Yazıcı
Date Deposited: 21 Aug 2022 13:33
Last Modified: 21 Aug 2022 13:33
URI: https://research.sabanciuniv.edu/id/eprint/44241

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