A high-gain SiGe BiCMOS LNA for 5G in-band full-duplex applications

Özkan, Tahsin Alper and Burak, Abdurrahman and Kalyoncu, İlker and Kaynak, Mehmet and Gürbüz, Yaşar (2021) A high-gain SiGe BiCMOS LNA for 5G in-band full-duplex applications. In: 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, Netherlands

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This paper presents a low noise amplifier (LNA) implemented in a SiGe BiCMOS technology for 5G applications. The LNA is based on a two-stage cascode amplifier topology with a differential input and single-ended output. The design of the first stage is pseudo-differential. The first stage is based on simultaneous noise and power matching technique. At the input, a balun for single-ended to differential-output conversion is located to enable single-ended measurements. The LNA achieves 25.3 dB of peak gain while dissipating 66 mW of power in small-signal operation. The input-referred 1 dB compression point and noise figure are-10 dBm and 2 dB measured at 25 GHz, respectively. This work achieves the highest FoM among the compared works attributed to the design of the two-stage cascode topology. The LNA occupies 1.35 mm2 including pads.
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: 5G mobile communication; BiCMOS integrated circuits; dynamic range; Low-noise amplifiers; noise figure
Divisions: Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 02 Sep 2022 12:24
Last Modified: 02 Sep 2022 12:25
URI: https://research.sabanciuniv.edu/id/eprint/43403

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