Large area emission in p-type polymer-based light-emitting field-effect transistors by incorporating charge injection interlayers

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Acar, Gizem and Iqbal, Muhammad Javaid and Chaudhry, Mujeeb Ullah (2021) Large area emission in p-type polymer-based light-emitting field-effect transistors by incorporating charge injection interlayers. Materials, 14 (4). ISSN 1996-1944

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Abstract

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V-1 s-1 and EQE of 1.6% at a luminance of 2600 cd m-2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.
Item Type: Article
Uncontrolled Keywords: Display pixilation; Organic electronics; Organic light emitting field effect transistors (LEFETs); P-type LEFETs; Polymers
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Gizem Acar
Date Deposited: 18 Aug 2022 16:20
Last Modified: 18 Aug 2022 16:20
URI: https://research.sabanciuniv.edu/id/eprint/43308

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