Design and optimization of cantilever based RF-MEMS shunt switch for 5G applications

Official URL: http://dx.doi.org/10.1109/DTIS53253.2021.9505131

This work reports on the design and optimization of a low voltage shunt MEMS switch for 5G mobile applications. As opposed to clamped-clamped beams conventionally serving as RF-MEMS shunt switches, the present switch design utilizes a fixed-free cantilever beam in a shunt configuration to minimize the actuation voltage requirements. Moreover, RF performance parameters (ON-state insertion loss and OFF-state signal isolation) for the proposed switch design are optimized by means of extensive high-frequency simulations to enable the use of such devices in mm-wave regime. To critically analyze the key controlling factors affecting switch performance, a parameterized study on the geometrical parameters of the proposed topology is performed. The simulations were carried out using commercially available finite element solvers (CoventorWare® and HFSS) which validate the low-voltage operation of the reported switch with actuation voltage as low as 7.5V while maintaining the RF insertion loss and RF isolation values below -0.3dB and above -36dB, respectively, for frequencies up to 45GHz.