Quantum dot and electron acceptor nano-heterojunction for photo-induced capacitive charge-transfer

Karatum, Onuralp and Eren, Guncem Ozgun and Melikov, Rustamzhon and Onal, Asim and Ow-Yang, Cleva W. and Sahin, Mehmet and Nizamoglu, Sedat (2021) Quantum dot and electron acceptor nano-heterojunction for photo-induced capacitive charge-transfer. Scientific Reports, 11 (1). ISSN 2045-2322

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Capacitive charge transfer at the electrode/electrolyte interface is a biocompatible mechanism for the stimulation of neurons. Although quantum dots showed their potential for photostimulation device architectures, dominant photoelectrochemical charge transfer combined with heavy-metal content in such architectures hinders their safe use. In this study, we demonstrate heavy-metal-free quantum dot-based nano-heterojunction devices that generate capacitive photoresponse. For that, we formed a novel form of nano-heterojunctions using type-II InP/ZnO/ZnS core/shell/shell quantum dot as the donor and a fullerene derivative of PCBM as the electron acceptor. The reduced electron–hole wavefunction overlap of 0.52 due to type-II band alignment of the quantum dot and the passivation of the trap states indicated by the high photoluminescence quantum yield of 70% led to the domination of photoinduced capacitive charge transfer at an optimum donor–acceptor ratio. This study paves the way toward safe and efficient nanoengineered quantum dot-based next-generation photostimulation devices.
Item Type: Article
Subjects: Q Science > QD Chemistry
Q Science > QC Physics
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Materials Science & Eng.
Sabancı University Nanotechnology Research and Application Center
Faculty of Engineering and Natural Sciences
Depositing User: Cleva W. Ow-Yang
Date Deposited: 28 Aug 2021 17:26
Last Modified: 18 Aug 2022 20:55
URI: https://research.sabanciuniv.edu/id/eprint/41639

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