A behavioral model for high Ge content in Si/Si1-xGex multi-quantum well detector

Shafique, Atia and Abbasi, Shahbaz and Ceylan, Ömer and Goeritz, Alexander and Yamamoto, Yuji and Kaynak, Canan Baristiran and Kaynak, Mehmet and Gürbüz, Yaşar (2018) A behavioral model for high Ge content in Si/Si1-xGex multi-quantum well detector. IEEE Sensors Journal, 18 (20). pp. 8280-8286. ISSN 1530-437X (Print) 1558-1748 (Online)

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Abstract

This paper presents a behavioral model for aSi/Si1−xGexmulti-quantum well (MQW) detector that predictsdevice characteristics to investigate the effect of increasing Gecontent in Si/Si1−xGexMQW. The modeling approach in thispaper is based on a physical instead of empirical approach,which allows to obtain a predictive behavioral analysis of highGe content with only a few fitting parameters. The model is usedto simulate device transfer characteristics with respect to variousamounts of Ge content used for Si1−xGexlayer in MQW. Thesimulation results of the proposed model are validated with theexperimental data. The simulated and the experimental data areconsistent over a wide range of Ge content varied from 30%up to 50%. The primary objective of this paper is to optimizeGe content in the Si/Si1−xGex MQW detector to achieve desiredthermal sensitivity measured in terms of temperature coefficientof resistance for a potential microbolometer application. Thisis the first study in the literature to develop such a highlypredictive behavioral model of a Ge-enriched Si/Si1−xGex MQW.The study also presents the effect of including the carbon deltalayers at the Si/Si1−xGex heterointerface on the device transfercharacteristics. The effect of Ge content on the overall noise isalso investigated by the noise characterization of the test devices.
Item Type: Article
Uncontrolled Keywords: Multi-quantum well; high Ge content; microbolometer; thermionic emission current; TCR
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK7800-8360 Electronics
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Ömer Ceylan
Date Deposited: 07 Aug 2019 20:23
Last Modified: 26 Apr 2022 10:10
URI: https://research.sabanciuniv.edu/id/eprint/38717

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