A SiGe BiCMOS bypass low-noise amplifier for x-band phased array RADARs

Türkmen, Eşref and Burak, Abdurrahman and Çalışkan, Can and Kalyoncu, İlker and Gürbüz, Yaşar (2019) A SiGe BiCMOS bypass low-noise amplifier for x-band phased array RADARs. In: Asia-Pacific Microwave Conference (APMC), Kyoto, Japan

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This paper presents a bypass low noise amplifier (LNA) for X-band phased array applications in 0.25μm SiGe BiCMOS technology. The trade-off between gain and bypass modes is considered to achieve high gain as well as low noise figure for gain mode while maintaining reasonable insertion loss with high power handling capability in bypass mode. In gain mode, the LNA achieves a measured gain of 17-14.2 dB and a noise figure of 1.75-1.95 dB over the 8-12 GHz band while consuming 27.4mW of DC-power. The measured input-referred I-dB compression point (IP 1dB ) is -3.9 dBm at 10 GHz. When operating in bypass mode, the measured insertion loss is 6.5-5.95 dB over the entire X-band with the measured IP 1dB of 15.1 dBm at 10 GHz, and it dissipates only 1μW power. Thanks to the bypassing technique, an increase of about 19 dB is achieved for IP 1dB in bypass mode compare to the gain mode. The measured return losses are better than 10 dB for both operating modes over whole X-band. The effective chip area excluding the pads is 0.3 mm 2 .
Item Type: Papers in Conference Proceedings
Uncontrolled Keywords: low-noise amplifier; BiCMOS integrated circuits; phased array radar
Divisions: Faculty of Engineering and Natural Sciences > Academic programs > Electronics
Faculty of Engineering and Natural Sciences
Depositing User: Yaşar Gürbüz
Date Deposited: 31 Jul 2019 12:45
Last Modified: 10 Jun 2023 17:16
URI: https://research.sabanciuniv.edu/id/eprint/37962

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